isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 isocom inc 720 e., park boulevard, suite 104, plano, tx 75074 usa tel: (972) 423-5521 fax: (972) 422-4549 24/9/97 db92182-aas/a2 1mm aperture opto-electronic single channel slotted interrupter switches with transistor sensors absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 85c operating temperature -25c to + 85c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 5v power dissipation 75mw output transistor collector-emitter voltage bv ceo 30v emitter-collector voltage bv eco 5v collector current i c 20ma power dissipation 75mw ists100 ISTS200 3.3 dia 2 plcs optical centre line 12.7 e 3.0 1 2 4 3 9.0 8.0 11.1 10.5 0.45 0.40 7.62 6.6 3.3 3.0 2.8 2.54 dimensions in mm 4 3 1 2 19.05 25.7 24.1 12.7 3.0 6.6 3.3 3.0 1 2 4 3 ists100 ISTS200 11.1 10.5 3.3 3.0 2.8 optical centre line 2.54 0.45 0.40 9.0 8.0 7.62 e description the ists100, ISTS200 opaque photointerrupters are single channel switches consisting of a gallium arsenide infrared emitting diode and a npn silicon photo transistor mounted in a polycarbonate housing. the package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. operating on the principle that objects opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an "on" state to an "off" state. features l high gain l 3mm gap between led and detector l polycarbonate case protected against ambient light applications l copiers, printers, facsimilies, record players, casette decks, optoelectronic switches
db92182-aas/a2 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.7 v i f = 50ma reverse voltage (v r )5vi r = 100 m a reverse current (i r ) 100 m av r = 5v output collector-emitter breakdown (bv ceo )30 v i c = 1ma ( note 1 ) emitter-collector breakdown (bv eco ) 5 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 10v coupled on-state collector current i c ( on ) 1.9 ma 30ma i f , 5v v ce ( note 1 ) collector-emitter saturation voltagev ce(sat) 0.4 v 30ma i f , 1.8ma i c turn-on time ton 8 m sv cc = 5v , turn-off time toff 50 m si f = 30ma,r l = 2.5k w 24/9/97 electrical characteristics ( t a = 25c unless otherwise noted ) note 1 special selections are available on request. please consult the factory.
db92182-aas/a2 24/9/97 25 -25 0 25 50 75 100 125 ambient temperature t a ( c ) 75 0 100 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -25 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 50 forward current i f (ma) 0 0.5 1.0 1.5 i f = 30ma v ce = 5v ambient temperature t a ( c ) -25 0 25 50 75 100 -25 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 30ma i c = 1.8ma 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 normalized output current normalized output current vs. forward current forward current i f (ma) 0.1 1 10 100 1 10 normalized output current normalized output current vs. collector-emitter voltage collector-emitter voltage v ce ( v ) 0.1 0.01 t a = 25c 0.02 0.04 0.2 0.4 2 4 1.6 1.8 2.0 normalized to i f = 30ma v ce = 5v pulsed pw = 100 m s prr = 100pps i f = 50ma 30ma 20ma 5ma 10ma normalized output current vs. ambient temperature normalized output current normalized to i f = 30ma v ce = 0.4v pulsed pw = 100 m s prr = 100pps t a = 25c
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